 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MBRD1040 10A LOW VF SCHOTTKY BARRIER RECTIFIER Features NEW PRODUCT * * * * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Maximum Junction Temperature Rating Very Low Forward Voltage Drop Very Low Leakage Current For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 A P 4 E G H J DPAK Dim A B C D E G H Min 6.3 3/4 0.3 2.1 0.4 1.2 5.3 1.3 1.0 5.1 Max 6.7 10 0.8 2.5 0.6 1.6 5.7 1.8 3/4 5.5 B 1 2 3 2.3 Nominal Mechanical Data * * * * * Case: DPAK Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking Information: See Page 2 Weight: 0.4 grams (approx.) M D C PIN 1 PIN 3 K L PIN 4, BOTTOMSIDE HEAT SINK J K L M P 0.5 Nominal Note: Pins 1 & 3 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Also see Figure 4) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Typical Thermal Resistance Junction to Case Typical Thermal Resistance Junction to Ambient Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJC RqJA Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VFM IRM Cj Min 40 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.45 3/4 0.47 0.1 12.5 700 Max 3/4 0.49 0.41 0.51 0.3 25 3/4 Unit V V mA pF Test Condition IR = 1mA IF = 8A, TS = 25C IF = 8A, TS = 125C IF = 10A, TS = 25C TS = 25C, VR = 35V TS = 100C, VR = 35V f = 1.0MHz, VR = 4.0V DC Value 40 28 10 100 6.0 80 -65 to +150 -65 to +150 Unit V V A A C/W C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Peak Reverse Current (Note 1) Junction Capacitance Notes: 1. Short duration test pulse used to minimize self-heating effect. DS30282 Rev. 3 - 2 1 of 3 MBRD1040 Ordering Information (Note 2) NEW PRODUCT Device MBRD1040-T Notes: Packaging DPAK Shipping 2500/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRD1040 = Product type marking code = Manufacturers' code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 YWW MBRD1040 100 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 TA = +150C 10 TA = +150C 100 1 TA = +25C 10 TA = +100C 0.1 1 0.01 TA = +75C TA = +75C 0.001 0.1 TA = +25C 0.0001 0 100 200 300 400 500 600 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics 10,000 0.01 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 12 IF(AV), AVERAGE FORWARD CURRENT (A) Cj, JUNCTION CAPACITANCE (pF) f = 1MHz Note 3 10 8 Note 4 1000 6 Note 5 4 2 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 DC Forward Current Derating 100 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Junction Capacitance vs. Reverse Voltage DS30282 Rev. 3 - 2 2 of 3 MBRD1040 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 7 6 5 DC 4 3 2 1 0 0 3 4.5 6 7.5 9 10.5 12 13.5 15 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation (Per Element) 1.5 Note 6 Tj = 150C Note 7 NEW PRODUCT Notes: 3. TA = TSOLDERING POINT, RqJC = 6.0C/W, RqCA = 0C/W. 4. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 15-30C/W. 5. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75C/W. 6. Maximum power disspiation when the device is mounted in accordance to the conditions described in Note 5. 7. Maximum power disspation when the device is mounted in accordance to the conditions described in Note 4. DS30282 Rev. 3 - 2 3 of 3 MBRD1040 |
Price & Availability of MBRD1040
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |